Data Sheet PG10592EJ01V0DS
7
NE3512S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under
the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220?C or higher
: 60 seconds or less
Preheating time at 120 to 180?C
: 120?30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
Partial Heating
Peak temperature (terminal
temperature)
: 350?C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution
Do not use different soldering methods together (except for partial heating).
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NE3514S02-A
HJ-FET NCH 10DB S02
NE3515S02-T1C-A
FET RF HFET 12GHZ 2V 10MA S02
NE3517S03-A
FET RF HJFET 20GHZ 4V 15MA S03
NE3520S03-A
FET RF HFET 20GHZ 2V 10MA S03
NE5500234-T1-AZ
MOSFET LD N-CH 4.8V 400MA SOT89
NE5511279A-A
MOSFET LD N-CHAN 7.5V 79A
NE5520379A-A
MOSFET LD N-CHAN 3.2V 79A
NE552R479A-A
MOSFET LD N-CHAN 3V 79A
相关代理商/技术参数
NE3512S02-T1D
制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02-T1D-A
功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3513M04
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-A
制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH LNA M04 4SMD
NE3513M04-T2
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-T2-A
制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Tape and Reel 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH LNA M04 4SMD
NE3513M04-T2B
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3514S02
制造商:CEL 制造商全称:CEL 功能描述:K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET